Two-dimensional (2D) layered materials may spawn a revolution in the field of solid-state micro/nano-electronic devices and circuits for extending the Moore’s law and complementing the CMOS technology. In our group, we employ 2D layered materials like graphene, molybdenum disulfide, and hexagonal boron nitride to fabricate advanced electronic devices and circuits.

Memristive devices, which exhibit multiple resistive states, are being commercialized as electronic memory, and recent studies have shown that they may also be exploited for advanced computation, data security and mobile communication. In our group, we fabricate crossbar arrays of memristive devices for different applications using advanced nanomaterials.

Advanced multi-scale characterization is essential to understand, not only the properties of the materials and devices, but also their ageing and failure mechanisms. In our group, we use advanced characterization tools to observe how the structure of nanoscale materials and devices change when they are subjected to electro-mechanical stresses.