We are developing spiking neural networks (SNNs) using advanced silicon neurons that consist on CMOS transistors operated in punch-through impact ionization regime [Nature 640, 69-76, 2025]. SNNs built using this approach consume very low energy and are ideal to deploy AI in mobile objects (edge AI). Our approach is 100% compatible with the industry.

We are integrating novel nanomaterials, such as 2D materials, at the back-end-of-line of silicon microchips [Nature 618, 57-62, 2023] to achieve superior electronic performance for memristive applications. Our team also developed the first 2D/GaN microchips [Nature 655, 899–907, 2026], which act as high-frequency switches for 5G and 6G telecommunication.

Our group is expert in nanomaterials characterization using atomic force microscopy and electron microscopy [Nature Electronics 2, 221–229, 2019]. We apply stress using in operando approaches to identify which are the atomic rearrangements responsible of device operation, and accelerated stresses to explore failure mechanisms.